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486990_DS.pdf
8 pages
Publié par
JOB
Copyright :
SFR/U9120
BVDSS = -100 V
RDS(on) = 0.
6
ID = -4.
9 A
-100
-4.
9
-3.
4
-20
±30
144
-4.
9
3.
2
-6.
5
2.
5
32
0.
26
- 55 to +150
300
3.
91
50
110
---n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n...
[Plus]
SFR/U9120
BVDSS = -100 V
RDS(on) = 0.
6
ID = -4.
9 A
-100
-4.
9
-3.
4
-20
±30
144
-4.
9
3.
2
-6.
5
2.
5
32
0.
26
- 55 to +150
300
3.
91
50
110
---n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V
n Lower RDS(ON) : 0.
444 (Typ.
)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RJC
RJA
RJA
o
C/W
Characteristic Max.
UnitsSymbol Typ.
FEATURES
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (TC=25
o
C)
Continuous Drain Current (TC=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25
o
C)
Total Power Dissipation (TC=25
o
C)
Linear Derating Factor
Operating Junction and
Stora
[Moins]
